1. Y. Xiong, N. J. Pieper, J. B. Kronenberg, D. R. Ball, N. A. Dodds and B. L. Bhuva, "Comparative Study of RHBD Techniques at a 3-nm Bulk FinFET Node,," in IEEE Transactions on Nuclear Science, doi: 10.1109/TNS.2025.3552051.
2. N. J. Pieper, Y. Xiong, J. B. Kronenberg, J. Pasternak, D. R. Ball and B. L. Bhuva, "SEU Vulnerability of SRAM Designs at a 3nm Bulk FinFET Node,," in IEEE Transactions on Nuclear Science, doi: 10.1109/TNS.2025.3539979.
3. J. B. Kronenberg, N. J. Pieper, Y. Xiong, D. R. Ball, and B. L. Bhuva, "Single-Event Upsets Due to n-Hits and p-Hits at the 3nm Bulk FinFET Node,," in IEEE Transactions on Nuclear Science, Early Access, doi: 10.1109/TNS.2025.3528740.
4. Y. Xiong, N. J. Pieper, J. B. Kronenberg, M. Delaney, C. Nunez, D. R. Ball, M. Casey, R. Fung, S. Wen, and B. L. Bhuva, "SEU Cross-Section Trends for Threshold Voltage Options from 16-nm to 3-nm Bulk FinFET Nodes,," in IEEE Transactions on Nuclear Science, vol. 72, no. 4, pp. 1479-1485, April 2025, doi: 10.1109/TNS.2024.3513215.
5. J. B. Kronenberg, N. J. Pieper, Y. Xiong, C. N. N. Sanchez, D. R. Ball and B. L. Bhuva, "Single-Event Responses of Dual-and Triple-well Designs at the 5nm Bulk FinFET Node,," in IEEE Transactions on Nuclear Science, vol. 72, no. 4, pp. 1358-1364, April 2025, doi: 10.1109/TNS.2025.3545001.
6. N. J. Pieper, Y. Xiong, J. Kronenberg, C. Nunez Sanchez, M. Delaney, D. Ball, M. Casey, R. Fung, and B. L. Bhuva, "Multicell Upsets in Flip-Flops in Advanced FinFET Nodes,," in IEEE Transactions on Nuclear Science, vol. 72, no. 4, pp. 1496-1503, April 2025, doi: 10.1109/TNS.2024.3521007.
7. C. N. Nuñez Sanchez, N. J. Pieper, Y. Xiong, J. B. Kronenberg, D. R. Ball and B. L. Bhuva, "Evaluation of Fin Geometry and Threshold Voltage Variants on Single-Event Effects in 7-, 5-, and 3-nm Bulk FinFET Technologies,," in IEEE Transactions on Nuclear Science, vol. 72, no. 4, pp. 1395-1402, April 2025, doi: 10.1109/TNS.2024.3503495.
8. Y. Xiong, N. J. Pieper, J. B Kronenberg, Y. Chiang, R. Fung, S.-J. Wen, and B. L Bhuva, "Evaluation of Threshold Frequencies for Logic Single-Event Upsets at Bulk FinFET Technology Nodes,," in IEEE Transactions on Nuclear Science, vol. 71, no. 8, pp. 1675-1681, Aug. 2024, doi: 10.1109/TNS.2024.3365474.
9. Y. Xiong, N. J. Pieper, N. A. Dodds, G. Vizkelethy, R. N. Nowlin, and B. L. Bhuva, "Response of 5-nm Bulk FinFET SRAMs to Extreme Ionizing and Non-ionizing Doses,," in IEEE Transactions on Nuclear Science, vol. 71, no. 4, pp. 437-445, April 2024, doi: 10.1109/TNS.2023.3334997.
10. N. J. Pieper, Y. Xiong, J. Pasternak, D. R. Ball, and B. L. Bhuva, "Effects of TID on SRAM Data Retention Stability at the 5-nm Node,," in IEEE Transactions on Nuclear Science, vol. 71, no. 8, pp. 1864-1871, Aug. 2024, doi: 10.1109/TNS.2023.3346178.
11. Y. Xiong, N. J. Pieper, Y. Qian, S. E. Wodzro, B. Narasimham, R. Fung, S.-J. Wen, and B. L. Bhuva, "Single-Event Upset Cross-Section at High Frequencies for RHBD Flip Flop Designs at the 5-nm Bulk FinFET Node,," in IEEE Transactions on Nuclear Science, vol. 71, no. 4, pp. 839-844, April 2024, doi: 10.1109/TNS.2023.3339329.
12. N. J. Pieper, Y. Xiong, J. Pasternak, R. Fung, S.-J. Wen, D. R. Ball, and B. L. Bhuva, "Temperature Dependence of Critical Charge and Collected Charge in 5-nm FinFET SRAM,," in IEEE Transactions on Nuclear Science, vol. 71, no. 4, pp. 861-868, April 2024, doi: 10.1109/TNS.2023.3336233.
13. Y. Qian, N. J. Pieper, Y. Xiong, J. Pasternak, D. R. Ball, and B. L. Bhuva, "SRAM Electrical Variability and SEE Sensitivity at 5-nm Bulk FinFET Technology,," in IEEE Transactions on Nuclear Science, vol. 71, no. 4, pp. 663-669, April 2024, doi: 10.1109/TNS.2023.3326797.
14. Y. Xiong, N. J. Pieper, M. W. McCurdy, D. R. Ball, B. D. Sierwaski, and B. L. Bhuva, "Evaluation of the Single-Event-Upset Vulnerability for Low-Energy Protons at the 7- and 5-nm Bulk FinFET Nodes,," in IEEE Transactions on Nuclear Science, vol. 70, no. 8, pp. 1687-1693, Aug. 2023, doi: 10.1109/TNS.2023.3246085.
15. Y. Xiong, N. J. Pieper, B. Narasimham, D. R. Ball, and B. L. Bhuva, "Efficacy of Spatial and Temporal RHBD Techniques at Advanced Bulk FinFET Technology Nodes,," in IEEE Transactions on Nuclear Science, vol. 70, no. 8, pp. 1814-1820, Aug. 2023, doi: 10.1109/TNS.2023.3246067.
16. N. J. Pieper, Y. Xiong, J. Pasternak, N. A. Dodds, D. R. Ball, and B. L. Bhuva, "Single-Event Upsets for Single-Port and Two-Port SRAM Cells at the 5-nm FinFET Technology,," in IEEE Transactions on Nuclear Science, vol. 70, no. 8, pp. 1673-1679, Aug. 2023, doi: 10.1109/TNS.2023.3240979.
17. Y. Xiong, N. J. Pieper, A. T. Feeley, B. Narasimham, D. R. Ball, and B. L. Bhuva, "Single-Event Upset Cross-Section Trends for D-FFs at the 5- and 7-nm Bulk FinFET Technology Nodes,," in IEEE Transactions on Nuclear Science, vol. 70, no. 4, pp. 381-386, April 2023, doi: 10.1109/TNS.2022.3226210.
18. N. J. Pieper, Y. Xiong, A. T. Feeley, J. Pasternack, N. A. Dodds, D. R. Ball, and B. L. Bhuva, "Study of Multicell Upsets in SRAM at a 5-nm Bulk FinFET Node,," in IEEE Transactions on Nuclear Science, vol. 70, no. 4, pp. 401-409, April 2023, doi: 10.1109/TNS.2023.3240318.
19. A.T. Feeley, Y. Xiong, N. J. Pieper, D. R. Ball and B. L. Bhuva, "SE Performance of D-FF Designs with Different VT Options at Near-Threshold Supply Voltages in 7-nm Bulk FinFET Technology,," in IEEE Transactions on Nuclear Science, vol. 69, no. 7, pp. 1582-1586, July 2022, doi: 10.1109/TNS.2022.3169959
20. Y. Xiong, A. T. Feeley, D. R. Ball and B. L. Bhuva, "Modeling Logic Error Single-Event Cross Sections at the 7-nm Bulk FinFET Technology Node,," in IEEE Transactions on Nuclear Science, vol. 69, no. 3, pp. 422-428, March 2022, doi: 10.1109/TNS.2021.3138501.
21. A.T. Feeley, Y. Xiong, N. Guruswamy and B. L. Bhuva, "Effect of Frequency on Total Ionizing Dose Response of Ring Oscillator Circuits at the 7-nm Bulk FinFET Node,," in IEEE Transactions on Nuclear Science, vol. 69, no. 3, pp. 327-332, March 2022, doi: 10.1109/TNS.2022.3144911.
22. Y. Xiong, A. T. Feeley, P. F. Wang, X. Li, E. X. Zhang, L. W. Massengill, and B. L. Bhuva, "Supply Voltage Dependence of Ring Oscillator Frequencies for Total Ionizing Dose Exposures for 7-nm Bulk FinFET Technology,," in IEEE Transactions on Nuclear Science, vol. 68, no. 8, pp. 1579-1584, Aug. 2021.